Passively Q-switched GdVO4/Nd:GdVO4 laser with Cr4+:YAG saturable absorber under direct 879 nm diode pumping to the emitting level |
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| Authors: | Y. F. Ma R. W. Fan X. Yu X. D. Li D. Y. Chen J. H. Yu |
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| Affiliation: | 1.National Key Laboratory of Science and Technology on Tunable Laser,Harbin Institute of Technology,Harbin,China;2.Institute of Opto-electronics,Harbin Institute of Technology,Harbin,China |
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| Abstract: | A passively Q-switched 1.06 μm laser with Cr4+:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO4/Nd:GdVO4 crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr4+:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T 0 = 90% Cr4+:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed. |
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