Thin-film electroluminescent devices excited by a linearly rising voltage |
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Authors: | N T Gurin O Yu Sabitov |
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Institution: | (1) Ulyanovsk State University, 432700 Ulyanovsk, Russia |
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Abstract: | The average and instantaneous luminances of a thin-film electroluminescent device (TFELD) are determined as functions of the
voltage rise time by solving kinetic equations for the concentration of excited emission centers in the electroluminescent
layer of the device. It is shown theoretically and experimentally that the dependences of the average and peak luminances,
the external and internal quantum yield, the energy yield, and the luminous efficacy as functions of the voltage rise time
all have a maximum, and the position of that maximum depends on the frequency of the driving voltage. The calculated and experimental
dependences make it possible to determine the main parameters of the electroluminescence process: the collisional excitation
cross section for the emission centers, the concentration of emission centers, and the transition probability of the emission
centers to an excited state, as well as the radiative and nonradiative recombination probabilities of these and other centers.
Zh. Tekh. Fiz. 69, 58–63 (February 1999) |
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Keywords: | |
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