Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures |
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Authors: | JJ Harris CT Foxon DE Lacklison KWJ Barnham |
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Abstract: | We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×1018 cm−3, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×106 cm2 V−1 s−1. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×106 cm2 V−1 s−1 for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically. |
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