High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber |
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| Authors: | Rui-Hua Wang Xiu-Wei Fan Hai-Xia Wang Hai-Tao Huang Li Zhu Jing-Liang He |
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| Affiliation: | 1. State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Ji’nan, 250100, China
2. College of Physics and Electronics, Shandong Normal University, Ji’nan, 250014, China
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| Abstract: | The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO4 laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors. |
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