Structural, elastic, and electronic properties of icosahedral boron subcarbides (B12C3, B13C2), subnitride B12N2, and suboxide B12O2 from data of SCC-DFTB calculations

The structural, elastic, and electronic properties of a series of icosahedral phases, such as boron subcarbides B₁₂C₃ and B₁₃C₂, subnitride B₁₂N₂, and suboxide B₁₂O₂, have been studied in the framework of the SCC-DFTB method. It has been found that the B₁₂C₂ and B₁₃C₂ phases manifest metal-like properties, while B₁₂C₃ and B₁₂O₂ are semiconductors. The estimates have shown that the insertion of 2p atoms (C, N, or O) into intericosahedral pores of elemental boron can cause both a decrease in its elastic modulus (an increase in the compressibility of B₁₂N₂) and a sharp increase in the modulus B (in subcarbides B₁₂C₃ and B₁₂BCC). On the other hand, the insertion of 2p atoms into α-B₁₂ will favor an increase in its hardness (suboxide B₁₂O₂ will have a maximum hardness).