无序GaInP光致发光谱的温度依赖关系

研究了无序ＧａＩｎＰ样品的温度依赖关系，大低温ＰＬ谱中，谱线呈单峰结构。随着温度从１５Ｋ升高到２５０Ｋ，说地宽从１６ｍｅＶ增大到３１ｍｅＶ，并且发生红移，同时强度减小两个数数量级。

TEMPERATURE DEPENDENCE OF THE DISORDERED Ga 0.52 In 0.48 P PHOTOLUMINESCENCE SPECTRUM

The integrated photoluminescence(PL) intensity of disordered Ga 0.52 In 0.48 P samples grown by metalorganic vapor phase epitaxy(MOVPE) have been measured as a function of temperature. The fitting to the integrated intensity shows two activation energies in two different temperature regions. Below 100K, the activation energy is about 4meV; above 100K, the activation energy is 35meV. We conclude that the low temperature PL behaviour is likely controlled by carriers thermalization from spatial fluctuations of the band edges followed by non radiative recombination. The high temperature PL behaviour is suspected to be dominated by a nonradiative path whose characteristic activation energy and transition probability depends upon the degree of sublattice ordering.