The acoustic method of the surface potential investigation in GaP:Te (110) real surface |
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Authors: | T Pustelny B Pustelny |
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Institution: | (1) Institute of Physics, Silesian University of Technology, 44-100 Gliwice, Poland |
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Abstract: | The acoustic method of the surface potential
investigation in semiconductors has been described. The method is based on
the transverse acoustoelectric effect TAV in layered structure:
piezoelectric waveguide – semiconductor. The paper presents experimental
results of the surface potential investigations obtained after various
surface treatments in the GaP:Te (110) single crystals. Strong impact of
mechanical and chemical surface treatments upon the surface potential values
are observed. It follows from the measurements that the acoustic method may
give interesting information about the surface potential of the
semiconductor monocrystals in the high frequency range. |
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Keywords: | |
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