A model of nanosecond laser ablation of compound semiconductors accounting for non-congruent vaporization |
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Authors: | Olga A Bulgakova Nadezhda M Bulgakova Vladimir P Zhukov |
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Institution: | 1. Institute of Thermophysics SB RAS, 1, Lavrentyev Ave., 630090, Novosibirsk, Russia 2. Novosibirsk State University, 2, Pirogova st., 630090, Novosibirsk, Russia 3. Institute of Computational Technologies SB RAS, 6, Lavrentyev Ave., 630090, Novosibirsk, Russia
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Abstract: | We report a model of nanosecond laser ablation of compound semiconductors taking into account stoichiometry loss as a result
of different volatilities of the material components. The model is based on the heat-flow equation for the bulk material and
the diffusion equation for its atomic constituents and takes into account variations of material properties as functions of
temperature and composition. Changing the optical response which results from stoichiometry violation is described within
the concept of an effective medium and a multi-layer reflection model is applied. For cadmium telluride, as an example, the
processes of ablation, melting, and resolidification under the action of a KrF laser have been studied in dynamics for particular
experimental conditions in a wide range of laser fluences from the ablation threshold to the plasma shielding regimes described
by the effective plasma plume representation. Multi-shot irradiation regimes have been investigated and the mechanism of the
irradiation-controlled stoichiometry reversal has been elucidated. |
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