Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces |
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Authors: | F. Rahman F. Khanom S. Inanaga H. Tsurumaki A. Namiki |
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Affiliation: | Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan |
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Abstract: | We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D2 and D2O molecules were found to desorb from the surface. The desorption kinetics of D2 and D2O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D2 desorption spectra as a function of Ts appeared to be very similar to the H-induced D2 desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed. |
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Keywords: | Radio frequency Spectroscopy Semiconductors |
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