DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes

Deposition of metallic tungsten (W) thin films on silicon substrates has been carried out using dc magnetron sputtering in argon or xenon gas. The deposition of W films was investigated at various working gas pressures, while the entire deposited W films were obtained at fixed power. The stress, resistivity, and structure of the W films were systematically determined as a function of the pressure of both argon and xenon. A compressive-to-tensile stress transition is observed as the working gas pressure is increased. The transition occurs at a critical pressure and coincides with a significant decrease of the grain size and an increase of the W-film resistivity. The stress transition of W-sputtered films with argon is associated with the transformation of -W phase into -W phase. The films deposited in xenon always exhibit the -W structure. In addition, a change in the Schottky barrier height (SBH) on n-type silicon of about 40±10 meV is observed at the critical pressure. On the other hand, the barrier height on the p-type silicon remains constant under all the experimental conditions investigated. These last results indicate that the Fermi level at the interface is pinned with respect to the valence band edge. The observed variation of the barrier height on n-type Si is discussed in terms of defects, change of the work function of the metal (W), and modification of the band gap of Si. PACS 72.20.-i; 73.30.+y; 73.20.-m