Organic homojunction diodes with a high built-in potential: interpretation of the current-voltage characteristics by a generalized Einstein relation |
| |
Authors: | Harada K Werner A G Pfeiffer M Bloom C J Elliott C M Leo K |
| |
Affiliation: | Institut für Angewandte Photophysik, Technische Universit?t Dresden, 01062 Dresden, Germany. |
| |
Abstract: | We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|