Formation of thermal vacancies in highly As and P doped Si |
| |
Authors: | Ranki V Saarinen K |
| |
Institution: | Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland. |
| |
Abstract: | Using positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as V-As3. We determine the vacancy formation energy of E(f)=1.1(2) eV and the migration energy of E(m)=1.2(1) eV in highly doped Si. By associating these values with the vacancy-impurity pair, we get an estimate of 2.8(3) eV for the formation energy of an isolated neutral monovacancy in intrinsic Si. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|