Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack |
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Authors: | Rüster C Gould C Jungwirth T Sinova J Schott G M Giraud R Brunner K Schmidt G Molenkamp L W |
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Affiliation: | Physikalisches Institut (EP3), Universit?t Würzburg, Am Hubland, D-97074 Würzburg, Germany. |
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Abstract: | We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures. |
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