Spectroscopy of GaAs/AlGaAs microstructures with submicron spatial resolution using a near-field scanning optical microscope |
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Authors: | D. V. Kazantsev N. A. Gippius Dzh. Oshinovo A. Forchel’ |
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Affiliation: | 1. Physics Institute, Russian Academy of Sciences, 117333, Moscow, Russia 2. Institute of General Physics, Russian Academy of Sciences, 117333, Moscow, Russia 3. Technische Physik, Universit?t Wurzburg, Am Hubland, 97074, Wurzburg, Germany
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Abstract: | A near-field scanning optical microscope (NSOM), which we built, is used to investigate 1–5-μm wide stripes with a 10-nm thick layer—a quantum well — on a GaAs surface. A map of the photoluminescence intensity is obtained synchronously with the topographic profile of the structures. The measured spatial distribution of the photoluminescence intensity is described satisfactorily in a model that takes into account carrier diffusion in the layer and the existence of a region with a short carrier lifetime near the side boundaries of the layer. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 523–527 (10 April 1996) |
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