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Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study |
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| Authors: | LI Pei-Cheng MEI Guang-Hui HU Guang-Xi WANG Ling-Li LIU Ran TANG Ting-Ao |
| Affiliation: | State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China |
| Abstract: | In this paper, we study the effects of an unintended dopant in the channel on the current-voltage characteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied. |
| Keywords: | current-voltage characteristics double gate MOSFET unintended dopant |
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