镶嵌型纳米锗的制备新方法及其光致发光研究

报道了通过热氧化氢化非晶锗硅薄膜和氢化非晶硅／氢化非晶锗多层膜以制备镶嵌于二氧化硅中纳米锗材料的新方法。研究结果表明：在经过氧化处理后，薄腊在的Ｓｉ与Ｏ结合形成氧化硅同时单晶Ｇｅ被析出形成了镶嵌型的纳米Ｇｅ颗粒；在Ａｒ＾＋激光（４８８ｎｍ）的激发下，观察到了室温下的光致民光现象。发光峰中心位于２．２ｅＶ。由多层腊制备出的样吕其发光强度相对加强，且半高宽也显著变窄，表明利用多层膜可较好地控制尺寸分布

FABRICATION OF EMBEDDED NANO CRYSTALLINE Ge AND ITS PHOTOLUMINESCENCE

In this paper, a new approach for preparing nanocrystalline Ge embedded in SiO 2 by oxidizing hydrogenated amorphous SiGe films and hydrogenated amorphous Si/amorphous Ge multilayers. It was shown that, after oxidation, Si was bonded to oxygen to form SiO 2 and nanocrystalline Ge was precipitated. Room temperature photoluminescence was observed by using Ar + laser (488nm) at RT and the luminescent peak is located at 2 2eV. The sample started from multilayers has a stronger luminescent intensity and narrower width compared with the sample started from SiGe films, which suggested the size distribution of nc Ge could be controlled in this structures.