Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process |
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Authors: | S Yukutake T Kawazoe T Yatsui W Nomura K Kitamura M Ohtsu |
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Institution: | (1) Electrical Engineering Department, Pennsylvania State University, University Park, PA 16802, USA;(2) Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA; |
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Abstract: | In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the p-type and n-type semiconductors,
respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination
(wavelength λ
0=660 nm) while reversely biasing the P3HT/ZnO pn-junction. As a result, a unique granular Ag film was formed, which originated
from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated
a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff
λ
c
(=570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident
light wavelength of 620 nm, which was shorter than λ
0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition. |
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Keywords: | |
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