| PIN管的延迟击穿性能初步实验研究 |
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| 引用本文： | 孙铁平,曾正中,丛培天.PIN管的延迟击穿性能初步实验研究[J].强激光与粒子束,2005,17(2):317-320. |
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| 作者姓名： | 孙铁平 曾正中 丛培天 |
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| 作者单位： | 西北核技术研究所,陕西,西安,710024;西北核技术研究所,陕西,西安,710024;西北核技术研究所,陕西,西安,710024 |
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| 基金项目： | 国家自然科学基金资助课题(10035020) |
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| 摘 要： | 延迟击穿器件(DBD)是一种新型半导体开关。研究了国产PIN二极管的延迟击穿效应，主要进行了单管、串联双管和串并联多管阵列PIN二极管器件的延迟击穿实验。实验结果显示，单管、双管和多管阵列PIN器件都可以陡化输入脉冲前沿，获得快前沿的输出脉冲。单管工作电压2.2 kV，脉冲前沿陡度由095 kV/ns提高到1.37 kV/ns；双管工作电压4.2 kV，脉冲前沿陡度由1.7 kV/ns提高到2.3 kV/ns；多管阵列工作电压8.0 kV，脉冲前沿陡度由2.4 kV/ns提高到3.2 kV/ns。
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| 关 键 词： | DBD器件 PIN二极管 延迟击穿 |
| 文章编号： | 1001-4322(2005)02-0317-04 |
| 收稿时间： | 2004/9/30 |
| 修稿时间： | 2004年9月30日 |
Elementary study of PIN diode as device delayed breakdown |
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| SUN Tie-ping,ZENG Zheng-zhong,CONG Pei-tian.Elementary study of PIN diode as device delayed breakdown[J].High Power Laser and Particle Beams,2005,17(2):317-320. |
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| Authors: | SUN Tie-ping ZENG Zheng-zhong CONG Pei-tian |
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| Institution: | 1.Northwest Institute of Nuclear Technology,P.O.Box 69- 10,Xi'an 710024,China |
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| Abstract: | This paper summarizes an experimental study of the delayed breakdown performance of silicon PIN diode. Single PIN diode, double series PIN diodes and stacked PIN diodes in parallel and series were tested,the results shown that the pulsefronts of input voltage became steep obviously.Single PIN diode operates at a hold-off voltage exceeding 2.2 kV, and the time rate of voltage(dV/dt) is promoted from 0.95 kV/ns to 1.37 kV/ns. Double series PIN diodes operates at a hold-off voltage of 4.2 kV, and the dV/dt is promoted from 1.7 kV/ns to 2.3 kV/ns. Stacked PIN diodes in parallel and series operate at a hold-off voltage of 8.0 kV,and the dV/dt is promoted from 2.4 kV/ns to 3.2 kV/ns. |
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| Keywords: | Delayed breakdown device PIN diode Delayed breakdown |
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