Low‐Temperature Cationic Rearrangement in a Bulk Metal Oxide |
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Authors: | Dr Man‐Rong Li Maria Retuerto Prof Peter W Stephens Prof Mark Croft Dr Denis Sheptyakov Vladimir Pomjakushin Zheng Deng Dr Hirofumi Akamatsu Venkatraman Gopalan Dr Javier Sánchez‐Benítez Felix O Saouma Prof Joon I Jang Prof David Walker Prof Martha Greenblatt |
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Institution: | 1. Department of Chemistry and Chemical Biology, Rutgers, the State University of New Jersey, Piscataway, NJ, USA;2. Department of Physics & Astronomy, State University of New York, Stony Brook, NY, USA;3. Department of Physics & Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ, USA;4. Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, Villigen PSI, Switzerland;5. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA;6. Departmentto de Química Física I, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid, Spain;7. Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, NY, USA;8. Lamont-Doherty Earth Observatory, Columbia University, Palisades, NY, USA |
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Abstract: | Cationic rearrangement is a compelling strategy for producing desirable physical properties by atomic‐scale manipulation. However, activating ionic diffusion typically requires high temperature, and in some cases also high pressure in bulk oxide materials. Herein, we present the cationic rearrangement in bulk Mn2FeMoO6 at unparalleled low temperatures of 150–300 oC. The irreversible ionic motion at ambient pressure, as evidenced by real‐time powder synchrotron X‐ray and neutron diffraction, and second harmonic generation, leads to a transition from a Ni3TeO6–type to an ordered‐ilmenite structure, and dramatic changes of the electrical and magnetic properties. This work demonstrates a remarkable cationic rearrangement, with corresponding large changes in the physical properties in a bulk oxide at unprecedented low temperatures. |
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Keywords: | bulk oxides cationic rearrangements ferrimagnetic semiconductors Mn2FeMoO6 physical property tunneling |
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