Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes

We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF₃SO₃H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A^?1, 80.7 lm W^?1) than those with conventional ITO (84.8 cd A^?1, 73.8 lm W^?1).