Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes |
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| Authors: | Dr Tae‐Hee Han Sung‐Joo Kwon Dr Nannan Li Hong‐Kyu Seo Dr Wentao Xu Prof Kwang S Kim Prof Tae‐Woo Lee |
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| Institution: | 1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk, Republic of Korea;2. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea |
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| Abstract: | We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A?1, 80.7 lm W?1) than those with conventional ITO (84.8 cd A?1, 73.8 lm W?1). |
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| Keywords: | chemical doping flexible OLEDs graphene transparent electrodes |
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