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高性能注入锁相光电振荡器
引用本文:曹哲玮,杨春,周正华. 高性能注入锁相光电振荡器[J]. 光子学报, 2017, 46(1). DOI: 10.3788/gzxb20174601.0123002
作者姓名:曹哲玮  杨春  周正华
作者单位:东南大学 电子科学与工程学院,南京,210096
基金项目:国防"十二五"预研项目和国家自然科学基金项目(No.61671148)资助 The National Defense Pre-Research Program of China during the 12th Five-Year Plan Period and the National Natural Science Foundation of China
摘    要:提出一种基于注入锁定和锁相环技术的注入锁相光电振荡器.利用注入锁定来改善光电振荡器的近载频相噪以及杂散抑制度.将光电振荡器的输出信号与外注入源进行鉴相,通过锁相环来提升频率稳定性,并进一步改善光电振荡器的近载频相噪.实验结果表明:注入锁相光电振荡器在电滤波器中心频率为9.5GHz、3dB带宽为20 MHz和光纤环长度为6km的情况下,实现了输出信号频率为9.5GHz的单模振荡;当注入锁定带宽为1.98kHz时,光电振荡器输出信号在1kHz频偏处的相位噪声为-125dBc/Hz,在10kHz频偏处的相位噪声为-147dBc/Hz,杂散抑制度高于80dB,阿伦偏差接近1.37×10~(-11)@1s和1.22×10~(-11)@1000s.

关 键 词:光电子学  光电振荡器  注入锁相  相噪  杂散抑制  阿伦偏差

High Performance Optoelectronic Oscillator Based on Injection-locked and Phase-locked Loop Techniques
CAO Zhe-wei,YANG Chun,ZHOU Zheng-hua. High Performance Optoelectronic Oscillator Based on Injection-locked and Phase-locked Loop Techniques[J]. Acta Photonica Sinica, 2017, 46(1). DOI: 10.3788/gzxb20174601.0123002
Authors:CAO Zhe-wei  YANG Chun  ZHOU Zheng-hua
Abstract:An injection-phase locked optoelectronic oscillator based on injection locking and phase-locked loop techniques was proposed.Utilizing the injection locking to reduce the close-in phase noise and increase the side-mode suppression ratio.Using the phase-locked loop to improve the frequency stability of the optoelectronic oscillator by detecting the phase between the output signal of the optoelectronic oscillator and the external injection source and also to furtherly improve the close-in phase noise performance.The experimental results show that, when the electrical filter′s center frequency and 3 dB bandwidth are 9.5 GHz and 20 MHz, single mode oscillation at 9.5 GHz is realized by a 6 km-fiber single loop injection-phase locked optoelectronic oscillator.When the injection locking bandwidth is 1.98 kHz, the phase noises of the optoelectronic oscillator′s output signal are about -125 dBc/Hz at 1kHz offset frequency and -147 dBc/Hz at 10kHz offset frequency, the SMSR is higher than 70 dB, and the Allan deviations are about 1.37×10-11@1s and 1.22×10-11@1000s.
Keywords:Optoelectronics  Optoelectronic oscillator  Injection locked and phase locked loop  Phase noise  Side-mode suppression ratio  Allan deviation
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