Neutral impurity scattering in semiconductors |
| |
| Authors: | B. Alkan |
| |
| Affiliation: | (1) Department of Engineering Physics, Faculty of Sciences, University of Ankara, 06100 Tandogan, Ankara, Turkey |
| |
| Abstract: | Summary Applying the correlation function technique, a temperature-independent mobility μn has been obtained and it is shown that this μn remains close to the experimental mobility ofn-type Ge around 10 K. |
| |
| Keywords: | Scattering by point defects dislocation surfaces and other imperfections (including Kondo effect) |
| 本文献已被 SpringerLink 等数据库收录！ |
|
