Effect of annealing on the opto-electronic properties of Cu0.9In1.0Se2.0 films

The influence of annealing on the structure and opto-electronic properties of Cu_0.9In_1.0Se_2.0 films prepared by solution growth technique has been studied. The films annealed at 500–520°C in air, vacuum (10^?4 torr), In-vapour and Se-vapour show polycrystalline chalcopyrite structure with orientation perpendicular to the (220) plane. Films annealed in Se-vapour at 500°C for 30 min have maximum grain size (560 Å), minimum optical energy gap, maximum absorption coefficient, lowest resistivity, maximum photosensitivity and thus are suitable for photovoltaic applications. Annealing in In-vapour or in vacuum changesp-type CuInSe₂ inton-type which possibly arises due to the increase in Se vacancies.