Institution: | 1. Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119 China
Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816 P. R. China
These authors contributed equally to this work.;2. Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119 China;3. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816 P. R. China;4. MIIT Key Laboratory of Flexible Electronics (KLoFE), Key Laboratory of Flexible Electronics (KLoFE), Xi'an Key Laboratory of Flexible Electronics (KLoFE), Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072 Shaanxi, China |
Abstract: | Two-dimensional (2D) AA′n?1MnX3n+1 type halide perovskites incorporating straight-chain symmetric diammonium cations define a new type of structure, but their optoelectronic properties are largely unexplored. Reported here is the synthesis of a centimeter-sized AA′n?1MnX3n+1 type perovskite, BDAPbI4 (BDA=NH3C4H8NH3), single crystal and its charge-transport properties under X-ray excitation. The crystal shows a staggered configuration of the PbI6]4? layers, a band gap of 2.37 eV, and a low trap density of 3.1×109 cm?3. The single-crystal X-ray detector exhibits an excellent sensitivity of 242 μC Gyair?1 cm?2 under the 10 V bias (0.31 V μm?1), a detection limit as low as 430 nGyair s?1, ultrastable response current, a stable baseline with the lowest dark current drift of 6.06×10?9 nA cm?1 s?1 V?1, and rapid response time of τrise=7.3 ms and τfall=22.5 ms. These crystals are promising candidates for the next generation of optoelectronic devices. |