| Interfacial photoconductivity effect of type-Ⅰ and type-Ⅱ Sb2Se3/Si heterojunctions for THz wave modulation |
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| 作者姓名： | 曹雪芹 黄媛媛 席亚妍 雷珍 王静 刘昊楠 史明坚 韩涛涛 张蒙恩 徐新龙 |
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| 作者单位： | Shaanxi Joint Laboratory of Graphene, State Key Laboratory Incubation Base of Photoelectric Technology and Functional Materials,International Collaborative Center on Photoelectric Technology, and Nano Functional Materials, Institute of Photonics & Photon-Technology,Northwest University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310)； |
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| 摘 要： | An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) util...
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