On the accessibility of the bandgap on semiconductor interfaces by non-equilibrium Fermi energies of electrons and holes |
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| Institution: | 1. Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;2. RENEW (Research and Education in Energy, Environment and Water) Institute, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;3. School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;4. School of Science, Westlake University, Hangzhou, Zhejiang 310024, China;5. Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China;1. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, PR China;2. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, PR China;3. Georgia Institute of Technology, Atlanta, GA 30332−0245, USA;1. Faculty of Science, Energy and Environment, King Mongkut''s University of Technology North Bangkok, Bangkok 10800, Thailand;2. Advanced Materials Research Unit, Department of Chemistry, School of Science, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand |
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| Abstract: | Non-equilibrium surface Fermi energies of electrons and holes on semiconductor electrodes reach only a part of the bandgap. This phenomenon is proved in greater detail by calculation of Fermi energy profiles, for stationary irreversible anodic or cathodic as well as for reversible charge transfer processes. both in the dark and at illumination. The effect of limited bandgap accessibility upon surface charging is outlined briefly. Solid-state junctions are likewise taken into account. |
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