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Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells |
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| Authors: | JH Kim I Lee KH Yoo LR Ram-Mohan |
| Institution: | a Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea b Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, South Korea c Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, South Korea d Department of Physics, Worcester Polytechnic Institute, Worcester, MA 01609, USA |
| Abstract: | Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural properties and excitonic transitions in InxGa1−xAs/In0.52Al0.48As multiple quantum wells (MQWs) for x = 0.54, 0.57 and 0.60. TEM images showed that high-quality 11-period InxGa1−xAs/In0.52Al0.48As MQWs had high-quality heterointerfaces. The results for the PC spectra at 300 K showed that the peaks corresponding to the excitonic transitions from the ground state electronic sub-band to the ground state heavy-hole band (E1-HH1) and the ground state electronic sub-band to the ground state light-hole band (E1-LH1) became closer to each other with decreasing In mole fraction and that E1-HH1 and E1-LH1 excitonic peaks shifted to longer wavelength with increasing applied electric field. The calculated values of the E1-HH1 interband transition energies were in qualitative agreement with those obtained form the PC measurements with and without applied electric field. These results can be helpful in understanding potential applications of InxGa1−xAs/InyAl1−yAs MQWs dependent on In mole fraction and applied electric field in long-wavelength optoelectronic devices. |
| Keywords: | 68 37 Lp 73 21 Fg 78 66 Fd |
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