Characterization of cubic phase MgZnO/Si(1 0 0) interfaces |
| |
| Authors: | J. Liang Y.F. Lao P. Yu |
| |
| Affiliation: | a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
b Department of Physics, Zhejiang University, Hangzhou 310027, China |
| |
| Abstract: | The microstructural properties of the MgxZn1−xO/Si(1 0 0) interface were investigated using transmission electron microscopy (TEM) and chemical states of the heterostructure were studied by high resolution X-ray photoelectron spectroscopy (XPS). By analyzing the valence band spectra of thin MgxZn1−xO/Si(1 0 0) heterostructures, the valence band offset between such Mg0.55Zn0.45O and Si(1 0 0) was obtained to be 2.3 eV. Using the cubic ternary thin films as insulators, metal-insulator-semiconductor (MIS) capacitors have been fabricated. Leakage current density lower than 3 × 10−7 A/cm2 is obtained under the electrical field of 600 kV/cm by current-voltage (I-V) measurement. Frenkel-Poole conduction mechanism is the main cause of current leakage under high electrical field. |
| |
| Keywords: | MgZnO thin film Band offset MIS structure Leakage mechanism |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
