Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer

Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(1 0 0) and Si(1 1 0) substrates, respectively, with an 100 Å thick Ag buffer layer. The growth temperature T_S was 270 °C, and the film thickness t was 500 Å. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, H_C(1 0 0) and H_C(1 1 0), are plotted as a function of the angle of rotation ? around the crystal axes 1 0 0] and 1 1 0], respectively. The results show that both H_C(1 0 0) and H_C(1 1 0) exhibit mixed features of the crystalline (K_C) and the induced uniaxial magnetic (K_u) anisotropies. K_u is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, H_K(1 0 0) and H_K(1 1 0), and the induced anisotropy filed, H_u, can be calculated as a function of ?, respectively. Then, each H_C curve is fitted by the equation: H_C = H_o + H_K + H_u, where H_o is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(1 0 0) film, we observed the charged cross-tie walls, and on the Ni(1 1 0) film, the un-charged Bloch walls.