Influence of domain boundaries on polarity of GaN grown on sapphire |
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Authors: | H Zhou F Phillipp JM Bell |
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Institution: | a Centre for Built Environment and Engineering Research, Queensland University of Technology, GPO Box 2434, Brisbane, Qld 4001, Australia b Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany c KLEO Halbleitertechnik GmbH and Co. KG, Karlsdorfer Str. 50, 88069 Tettnang, Germany |
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Abstract: | GaN films were grown on sapphire substrates by laser-induced reactive epitaxy. The domains in the films were determined to be the Ga-polarity by the convergent beam electron diffraction (CBED) technique, while the adjacent matrices had the N-polarity. The domain boundaries were characterized as inversion domain boundaries (IDBs). An atomic structure of the IDB is proposed based on high-resolution transmission electron microscopy (HRTEM) investigations. Control of the polarity of GaN/sapphire films was achieved by suppressing the formation of IDBs with an interlayer of AlGaN and a low-temperature GaN buffer layer. |
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Keywords: | 61 16 Bg 61 72 Ff 68 55 &minus a |
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