Microwave detected transient photoconductivity measurements during plasma deposition of intrinsic hydrogenated amorphous silicon |
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Authors: | H. C. Neitzert M. Kunst |
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Affiliation: | (1) Dept. Solare Energetik, Hahn-Meitner Institut, Glienicker Strasse 100, W-1000 Berlin 39, Fed. Rep. Germany |
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Abstract: | Contactless in-situ measurements of the microwave detected transient photoconductivity during growth of intrinsic a-Si:H films by plasma enhanced chemical vapour deposition are presented. It is shown, that these measurements can be performed without perturbation of the deposition process. The growth of a-Si:H films at 250° C and 120° C substrate temperature is studied and the information obtained from these measurements is discussed. In-situ characterization during growth of a multilayer structure with films deposited subsequently at 120° C, 250° C and again at 120° C is shown. |
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Keywords: | 73.60.Fw 72.80.Ng |
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