Electron diffraction study on the molecular structure of methyltrimethoxysilane |
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Authors: | É Gergö I Hargittai Gy Schultz |
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Institution: | Department of Inorganic Chemistry, The Budapest Technical University, H-1521 Budapest, Gellért tér 4 Hungary;Central Research Institute for Chemistry, Hungarian Academy of Sciences, H-1088 Budapest, Puskin utca 11-13 Hungary |
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Abstract: | The electron diffraction data for methyltrimethoxysilane are consistent with a C3 symmetry model, the predominant forms of which have rotational angle(s) between 100 and 155° around the SiO bond (the anti conformation of the CSiOC chain would respond to 0°). There is probably large amplitude motion around the SiO bonds. The following bond lengths and bond angles were determined: ra(CH) 1.093 ± 0.005, ra(SiC) 1.842 ± 0.013, ra(SiO) 1.632 ± 0.004, ra(OC) 1.425 ± 0.004 », ∠CSiO 109.6 ± 0.5°. and ∠SiOC 123.6 ± 0.5°. |
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