Characterization of x‐rays emerging from between reflector and sample carrier in reflector‐assisted TXRF analysis

The possible application of an Si reflector, which is placed just above the sample carrier in total reflection x‐ray fluorescence (TXRF) analysis, was investigated. The x‐rays that were emitted from an Mo tube and passed between the Si reflector and the Si sample carrier were analyzed with an Si drift detector. In our experimental setup, the angle between the reflector and the sample carrier can be changed by adjusting the inclination of the reflector. The intensity of the x‐rays that emerged from between the two Si surfaces drastically changed depending on the reflector angle. At a proper reflector angle, this intensity showed a maximum and, in addition, the Compton peak in the x‐ray spectrum was suppressed. When this x‐ray beam was used for excitation of TXRF signals, the highest intensity of x‐ray fluorescence emitted from the sample was detected, indicating that these experimental conditions are useful for the enhancement of TXRF intensities. Copyright © 2004 John Wiley & Sons, Ltd.