首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Crystal and Species Engineering with Semi‐Flexible Nitrogen Containing Organic Cations: Generation of [H13O6]+ Ions with the Unfavoured Unbranched Topology by Enclosing Hydrochloric Acid in a Porous Inorganic‐Organic Hybrid Material
Authors:J Graf  Walter Frank
Abstract:The reaction of rhodium(III) chloride trihydrate with 1, 4‐diazacycloheptane in concentrated hydrochloric acid results in the formation of tris(1, 4‐diazoniacycloheptane) hexaaquahydrogen(1+) bis(hexachlororhodate(III)) chloride, C5H14N2]3H13O6]RhCl6]2Cl ( 1 ). Dark red crystals of 1 are obtained by diffusion‐controlled crystallization at room temperature. Slow evaporation of the mother liquor over a period of several days yields a few tiny crystals of the bis(1, 4‐diazoniacycloheptane) hexachlororhodate(III) chloride hydrate, C5H14N2]2RhCl6]Cl ˙ 1.75 H2O ( 2 ), as red thin squared plates. In the context of crystal engineering, compounds 1 and 2 are inorganic‐organic hybrid materials built up from octahedral RhCl6]3‐, simple Cl and semi‐flexible heterocyclic 1, 4‐diazoniacycloheptane ions, incorporating either the H13O6]+ and further Cl ions or portions of simple water molecules. Both compounds crystallize in the space group type P21/c. Compound 1 contains isolated H13O6]+ ions with a linear chain‐like configuration enclosed in the cavities of the inorganic‐organic framework. The presence of a strong central O···H···O hydrogen bond within the H13O6]+ ions in 1 is confirmed by the short O···O separation of 2.47Å and by characteristic IR absorption bands at 1626 (s), ~ 1250 (m) and 668 (m) cm‐1. During the thermal decomposition, compound 1 looses at first five equivalents of water and one equivalent of hydrochloric acid in a two‐step process at 37 °C and 67 °C. This is followed by the decomposition of the 1, 4‐diazoniacycloheptane cations and the hexachlororhodate(III) anions, starting at 190 °C and proceeding intensified at 240 °C.
Keywords:Rhodium  Hexachlororhodates(III)  Hexaaquahydrogen(1+) Cation  Hydrogen Bonds  Crystal Engineering
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号