Determination of an accurate depth distribution of sodium, calcium and aluminium in thin oxide layers using several methods

Summary Experience in obtaining accurate sodium, calcium and aluminium profiles in silicon dioxide using SIMS and Auger depth profiling is reported. With the knowledge of implantation energy and ion dose, it is possible to calculate and to realize well defined implantation profiles in special substrates with high accuracy. The technological demand is to measure this so called accurate profiles in implanted structures without alteration by the measurement. SIMS and Auger profiling have been tested in special applications to study the influence of ion sputtering on the depth distribution in membranes and to obtain accurate profiles. Experimental results are presented for the application of Auger profiling at sample edges and SIMS profiling using negative ions. In the case of Auger profiling a transformation routine was developed for using linescan and sputter profile results in combination.