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用全带Monte Carlo方法模拟纤锌矿相GaN和ZnO材料的电子输运特性
引用本文:郭宝增.用全带Monte Carlo方法模拟纤锌矿相GaN和ZnO材料的电子输运特性[J].物理学报,2002,51(10):2344-2348.
作者姓名:郭宝增
作者单位:河北大学电子信息工程学院,保定071002
基金项目:国家留学基金 (批准号 :98813 0 5 4)资助课题~~
摘    要:报告了用全带MonteCarlo方法模拟纤锌矿相GaN和ZnO材料电子输运特性的结果.模拟所用的能带结构数据是用经验赝势法算得的.通过模拟得到了两种材料的平均漂移速度和平均能量与电场强度关系曲线,求得了电子迁移率.并且将两种材料的结果以及文献报道的GaAs的模拟结果进行了比较 关键词: 蒙特卡罗模拟 GaN ZnO 输运特性 能带结构

关 键 词:蒙特卡罗模拟  GaN  ZnO  输运特性  能带结构
文章编号:1000-3290/2002/51(10)/2344-05
收稿时间:2002-01-19
修稿时间:3/5/2002 12:00:00 AM

Study of electron transport properties for wurtzite GaN and ZnO with full band Monte Carlo simulation
Guo Zeng-Bao.Study of electron transport properties for wurtzite GaN and ZnO with full band Monte Carlo simulation[J].Acta Physica Sinica,2002,51(10):2344-2348.
Authors:Guo Zeng-Bao
Abstract:We present the first calculated results of electron transport properties of the wurtzite GaN and ZnO with the full band Monte Carlo simulations.The band structure data being used in the simulations are based on the empirical pseudopotential method.The characteristics of drift velocity field and average energy field for both materials are obtained from Monte Carlo calculations,and electron mobility also are obtained.The comparison among the results of both materials,as well as the Monte Carlo results of GaAs reported by other authors have been made.
Keywords:Monte Carlo simulation  GaN  ZnO  transport properties  band structure  
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