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三元荆棘状Zn1-xCdxO纳米结构及其光致发光特性
引用本文:张志军,王发展,刘勃,原思聪.三元荆棘状Zn1-xCdxO纳米结构及其光致发光特性[J].物理化学学报,2008,24(10):1912-1916.
作者姓名:张志军  王发展  刘勃  原思聪
作者单位:School of Materials Science and Engineering, Xi’an University of Architecture &Technology, Xi’an 710055, P. R. China; School of Mechanical and Electrical Engineering, Xi’an University of Architecture&Technology, Xi’an 710055, P. R. China
摘    要:以锌粉(Zn)、镉粉(Cd)为源材料, 金(Au)做催化剂, 采用热蒸发法, 在硅(Si)衬底上制备出掺Cd摩尔分数为6.7%的三元荆棘状Zn1-xCdxO单晶纳米结构. 荆棘状纳米结构样品的主干直径均一, 约为100 nm. 主干两侧刺的直径和长度分别约为10和100 nm. 由于Cd替位原子对ZnO带隙的调节作用, 样品的近带边(NBE)紫外(UV)发射从3.37 eV红移到3.13 eV. 结果表明, 氧气(O2)分压是形成荆棘状Zn1-xCdxO纳米结构的重要条件.

关 键 词:ZnO  纳米结构  纳米线  晶体生长  半导体杂质  
收稿时间:2008-05-04
修稿时间:2008-07-03

Structural and Photoluminescent Properties of Ternary Zn1-xCdxO Bramble-like Nanostructures
ZHANG Zhi-Jun,WANG Fa-Zhan,LIU Bo,YUAN Si-Cong.Structural and Photoluminescent Properties of Ternary Zn1-xCdxO Bramble-like Nanostructures[J].Acta Physico-Chimica Sinica,2008,24(10):1912-1916.
Authors:ZHANG Zhi-Jun  WANG Fa-Zhan  LIU Bo  YUAN Si-Cong
Institution:School of Materials Science and Engineering, Xi’an University of Architecture &Technology, Xi’an 710055, P. R. China; School of Mechanical and Electrical Engineering, Xi’an University of Architecture&Technology, Xi’an 710055, P. R. China
Abstract:Ternary Zn1-xCdxO single-crystal bramble-like nanostructures with an incorporation Cd molar ratio of about 6.7% were synthesized by thermal evaporation of Zn and Cd on an Si substrate using Au as catalyst. The as-grown Zn1-xCdxO nanobrambles had a fairly uniform trunk with a diameter of approximately 100 nm. The diameter and length of the two-sided nano-thorns were about 10 and 100 nm, respectively. Ultra-violet (UV) near-band-edge (NBE) emission of the Zn1-xCdxO nanobrambles was red-shifted from3.37 to 3.14 eV due to the direct modulation of band gap caused by Cd substitution. The oxygen partial pressure was deemed as the critical experimental parameter for the formation of the bramble-like Zn1-xCdxO nanostructures.
Keywords:ZnO  Nanostructure  Nanowires  Crystal growth  Impurity in semiconductor
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