Improved-performance, InGaAs/InGaAsP (/spl lambda/=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping |
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| Authors: | Lee JJ Mawst LJ Botez D |
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| Institution: | Reed Center for Photonics, Univ. of Wisconsin-Madison, WI, USA; |
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| Abstract: | Doping the waveguide core (p=2/spl times/10/sup 17/ cm/sup -1/) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (/spl lambda/=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, J/sub th/. For 2 mm long, 100 /spl mu/m wide stripe, uncoated chips J/sub th/ decreases from /spl sim/188 A/cm/sup 2/ to /spl sim/150 A/cm/sup 2/. High characteristic temperatures for J/sub th/ and the slope efficiency are obtained: T/sub 0/=215K and T/sub 1/=600K. |
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