Noise characteristics of a superlattice avalanche photodiode |
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| Authors: | P Chakrabarti S C Choudhury B B Pal |
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| Institution: | (1) Department of Electronics and Communication Engineering, Birla Institute of Technology, 835215 Mesra, Ranchi, India;(2) Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, 221005 Varanasi, India |
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| Abstract: | The noise generated due to randomness of multiplication process in the avalanche region of an Al
x
Ga1–x
As/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given. |
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| Keywords: | 72 70 79 20 85 60 |
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