Discussion on the formation and bonding in three [Ga8R10] compounds: the diversity in classical Ga-Ga bonds |
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Authors: | Hartig Jens Steiner Jochen Stösser Anna Schnöckel Hansgeorg |
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Affiliation: | University of Karlsruhe TH, Engesserstrasse 15, Geb. 30.45, 76128 Karlsruhe, Germany. |
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Abstract: | Herein we describe three Ga(8) compounds that feature gallium atoms in an oxidation state of 1.25 with normal valent 2e-2c bonding. Their structures and the influence of their ligands (phosphorus and nitrogen atoms directly bonded to the Ga(8) moieties) are discussed on the basis of DFT calculations, providing an insight into a probable mechanism for insertion reactions between GaX and GaX(3) species that lead to a reaction cascade via halides like Ga(2)X(4) and Ga(5)X(7) to Ga(8)X(10) and Ga(8)X(12) (2-), respectively. Finally, the Ga(8) cores of the three title compounds were compared with the topology of carbon atoms in C(8) alkanes. |
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Keywords: | cluster compounds density functional calculations gallium metal–metal interactions subvalent compounds |
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