Luminescence of hafnium dioxide films produced from hafnium dipivaloylmethanate

A technique is developed for measuring luminescence spectra of hafnium dioxide using a hydrogen lamp as an excitation source. The luminescence spectra of the as-grown and annealed hafnium dioxide films prepared by chemical deposition from volatile hafnium dipivaloylmethanate on the Si(111) substrates are measured at room temperature. Intense luminescence at λ ≌ 280 nm is characteristic of nanocrystallites of monoclinic modification. The band gap width is found to be ≌ 5.76 eV. It is shown that the film composition significantly deviates from the stoichiometric one. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 63–67, April, 2007.