Luminescence of hafnium dioxide films produced from hafnium dipivaloylmethanate |
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Authors: | V I Belyi A A Rastorguev |
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Institution: | (1) A. V. Nikolaev Institute for Inorganic Chemistry of Siberian Branch of Russian Academy of Sciences, Russia;(2) Tomsk State University, Russia |
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Abstract: | A technique is developed for measuring luminescence spectra of hafnium dioxide using a hydrogen lamp as an excitation source.
The luminescence spectra of the as-grown and annealed hafnium dioxide films prepared by chemical deposition from volatile
hafnium dipivaloylmethanate on the Si(111) substrates are measured at room temperature. Intense luminescence at λ ≌ 280 nm
is characteristic of nanocrystallites of monoclinic modification. The band gap width is found to be ≌ 5.76 eV. It is shown
that the film composition significantly deviates from the stoichiometric one.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 63–67, April, 2007. |
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