| Luminescence properties of InxGa1-xN（x～0.04） films grown by metal organic vapour phase epitaxy |
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| 引用本文： | 赵维,汪莱,王嘉星,罗毅.Luminescence properties of InxGa1-xN（x～0.04） films grown by metal organic vapour phase epitaxy[J].中国物理 B,2011,20(7):76101-076101. |
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| 作者姓名： | 赵维 汪莱 王嘉星 罗毅 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, and Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant Nos. 2011CB301902 and 2011CB301903）, the High Technology Research and Development Program of China （Grant Nos. 2007AA05Z429 and 2008AA03A194）, the National Natural Science Foundation of China （Grant Nos. 60723002, 50706022, 60977022, and 51002085）, the Beijing Natural Science Foundation of China （Grant No. 4091001）, the Industry, Academic and Research Combining, and the Public Science and Technology Special Program of Shenzhen of China （Grant No. 08CXY-14）. Acknowledgment The authors are grateful to Dr. Chen Li at the Department of Physics at Peking University for her CL measurements, and also to the Evans Analytical Group for their SIMS measurements. |
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| 摘 要： | In x Ga 1-x N (x ～ 0.04) films are grown by metal organic vapour phase epitaxy.For the samples grown on GaN directly,the relaxation of InGaN happens when its thickness is beyond a critical value.A broad band is observed in the luminescence spectrum,and its intensity increases with the increasing degree of relaxation.Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN.The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect.The measurement results of the tensile-strained sample further demonstrate the conclusions.
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| 关 键 词： | InGaN phase separation composition inhomogeneity |
| 收稿时间： | 2010-10-09 |
| 修稿时间： | 3/9/2011 12:00:00 AM |
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