Free boundary problem for a viscous compressible flow associated with oxidation of silicon |
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| Authors: | V A Solonnikov Yi Fahuai |
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| Institution: | (1) St. Petersburg Branch of V. A. Steklov Mathematical Institute of the Russian Academy of Science, Fontanka 27, 191011 St. Petersburg, Russia;(2) Department of Mathematics, Suzhou University, 215006 Suzhou, China |
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| Abstract: | This paper is concerned with a free boundary problem describing the oxidation process of silicon. Its mathematical model is
a compressible Navier-Stokes equations coupling a parabolic equation and a hyperbolic one. Surface tension is involved at
the free boundary and density equation is non-homogeneous. It is proved that for arbitrary data satisfying only natural consistency
conditions the problem is uniquely solvable on some finite time interval.
Supported by National Natural Science Foundation of China |
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| Keywords: | Free boundary problem Navier-Stokes equations Oxidation of silicon |
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