Development of a model of silicon carbide thermodestruction for preparation of graphite layers |
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Authors: | S Yu Davydov A A Lebedev N Yu Smirnova |
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Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | A three-stage scheme of the silicon carbide thermodestruction resulting in surface graphitization, which was proposed earlier (based on structural studies), is discussed. A theoretical analysis shows, however, that this process occurs in two stages, namely, thermodesorption of silicon atoms from the two outer Si-C bilayers followed by condensation of carbon atoms on the Si(0001) face of silicon carbide, thus giving rise to the formation of a two-dimensional graphite structure (graphene). |
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