| Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature |
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| 作者姓名： | Tao Ping, Huang Lei, Cheng H H, Wang Huan-Hua, Wu Xiao-Shan |
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| 作者单位： | [1]Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China; [2]National Taiwan University, Center for Condensed Matter Sciences, Talpei 106, Taiwan, China; [3]Beijing Synchrotron Radiation Facility (BSRF), Institute of High Energy Physics, Beijing 100049, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 11274153, 11204124, and 51202108） and the National Key Projects for Basic Research of China （Grant No. 2010CB923404）. |
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| 摘 要： | We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.
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| 关 键 词： | 外延生长 电影 低温 锗 晶格参数 锡薄膜 分子束外延 灵敏度分析 |
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