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超宽带延时幅相控制多功能芯片的设计
引用本文:陈月盈,朱思成,赵子润.超宽带延时幅相控制多功能芯片的设计[J].微波学报,2018,34(1):84-88.
作者姓名:陈月盈  朱思成  赵子润
作者单位:中国电子科技集团公司第十三研究所, 石家庄 050051
基金项目:国家自然科学基金(60671057)
摘    要:针对航空航天和卫星通信等设备的需求,介绍了一款超宽带延时幅相控制多功能芯片。该芯片集成了数字和微波电路,有T/R 开关、5 位数控延时器(10 ps 步进TTD)、5位数控衰减器(1 dB 步进ATT)、2 个行波放大器、均衡器及数字电路。基于GaAs E/D PHEMT 工艺研制出了芯片实物,芯片尺寸为4.5 mm*5.0 mm*0.07 mm。采用微波在片测试系统对该幅相控制多功能芯片进行了实际测试,在3 ~ 17 GHz 频段内实现了10~310 ps 延时范围,1~31 dB 衰减范围。测试结果显示,发射/接收增益大于2 dB,发射1 dB 压缩输出功率P1 dB_Tx大于12 dBm,接收1 dB 压缩输出功率P1 dB_Rx大于10 dBm,全态输入输出驻波均小于1.7,+5 V 下工作电流130 mA,-5 V 下工作电流12 mA。衰减器全态RMS 精度小于1.4 dB,全态附加调相小于±8°。延时器全态RMS 精度小于3 ps,全态附加调幅小于±1 dB。

关 键 词:超宽带  砷化镓单片集成电路  多功能芯片  实时延时器  数控衰减器

Design of Ultra-wideband True-Time Delay Multi-function Chip
CHEN Yue-ying,ZHU Si-cheng,ZHAO Zi-run.Design of Ultra-wideband True-Time Delay Multi-function Chip[J].Journal of Microwaves,2018,34(1):84-88.
Authors:CHEN Yue-ying  ZHU Si-cheng  ZHAO Zi-run
Institution:The 13th Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China
Abstract:Based on the demand for equipment such as aerospace and satellite communications, the ultra wideband true-time delay multi-function chip (MFC) is designed in this paper. Moreover, the digital and microwave circuits are integrated in the MFC, which contains T/ R SPDTs, a 5 bit digitally controlled true-time delay(TTD), a 5 bit digitally controlled attenuator(ATT) two TWT amplifiers,equilizer and digital circuit. Characterized with compact size of 4.5 mm * 5.0 mm * 0.07 mm, the MFC is fabricated on GaAs E/ D PHEMT technology. The test results on wafer show that the MFC provides 10~310 ps with an interval of 10 ps and 1~31 dB with an interval of 1 dB in the frequency range of 3~17 GHz. The test results show that the measured gain is more than 2 dB,and the 1 dB compressed output power P1dB_Tx is more than 12 dB in transmitting mode;while in receiving mode,the test gain is more than 2 dB,and the 1 dB compressed output power P1dB_Rx is more than 10 dB. The input and output VSWRs are better than 1.7 on the whole bandwidth for all states. The +5 V DC power consumption is better than 130 mA, and the -5 V DC power consumption is less than 12 mA. The root mean square (RMS) of ATT and phase variation is reduced to 1.4 dB and ±8°for all states. The root mean square (RMS) of TTD and insertion variation is reduced to 3 ps and ±1 dB for all states.
Keywords:ultra-wideband  GaAs MMIC  multi-function chip(MFC)  true-time delay(TTD)  digitally controlled attenuator(ATT)
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