| 应变SiGe层中本征载流子浓度的计算 |
| |
| 引用本文： | 赵传阵,唐吉玉,文于华,吴靓臻,孔蕴婷.应变SiGe层中本征载流子浓度的计算[J].固体电子学研究与进展,2007,27(4):449-451,467. |
| |
| 作者姓名： | 赵传阵 唐吉玉 文于华 吴靓臻 孔蕴婷 |
| |
| 作者单位： | 华南师范大学物理与电信工程学院,广州,510006 |
| |
| 摘 要： | 采用解析的方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度n_i与Ge组分x、温度T、掺杂浓度N的定量依赖关系;拟合了价带有效态密度公式和重掺杂禁带变窄公式。发现在一定掺杂浓度下,本征载流子浓度随Ge组分的增加而变大,并且本征载流子浓度增加的速度越来越快。在一定Ge组分下,本征载流子浓度随掺杂浓度的增加而变大。随着掺杂浓度的增加,本征载流子浓度的增长速度变得越来越缓慢。
|
| 关 键 词： | 锗硅合金 应变 有效态密度 本征载流子浓度 掺杂浓度 |
| 文章编号： | 1000-3819（2007）04-449-03 |
| 收稿时间： | 2005-12-08 |
| 修稿时间： | 2006-01-24 |
The Calcalation of the Intrinsic Carrier Concentration of Strained Si1-xGex Layers |
| |
| ZHAO Chuanzhen,TANG Jiyu,WEN Yuhua,WU Liangzhen,KONG Yunting.The Calcalation of the Intrinsic Carrier Concentration of Strained Si1-xGex Layers[J].Research & Progress of Solid State Electronics,2007,27(4):449-451,467. |
| |
| Authors: | ZHAO Chuanzhen TANG Jiyu WEN Yuhua WU Liangzhen KONG Yunting |
| |
| Abstract: | In this paper, a model for the intrinsic carrier concentration is developed and the intrinsic carrier concentration is calculated analytically with the varying of the temperature T, Ge fraction x and doping concentration. In the model,The new reasonable formulas of valence band effective states and the band gap narrowing caused by heavy doping are gained. It is found that for the given doping concentration, the intrinsic carrier concentration becomes lager and larger with the varying of Ge fraction and the inceasing speed also becomes larger and larger. For the given Ge fraction x,the intrinsic carrier concentration becomes lager and larger with the varying of doping concentration but the inceasing speed becomes smaller and samller. |
| |
| Keywords: | SiGe alloy stain effective densities of states intrinsic carrier concentration impurity concentration |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
