Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere |
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| Authors: | Y. -F. Lu M. Takai S. Nagamoto S. Namba |
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| Affiliation: | (1) Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, 560 Osaka, Japan;(2) D.S. Scanner Co. Ltd., 5-3-7. Fukushima, 553 Osaka, Japan |
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| Abstract: | Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360  m/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained. |
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| Keywords: | 75.50G 81.60 |
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